amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 1 MAAP-000074-PED000 rev ? preliminary datasheet 1. t b = mmic base temperature 2. adjust v gg between ?2.6 and ?1.5v to achieve specified i dq . parameter symbol typical units bandwidth f 2.0-8.0 ghz output power p out 39 dbm 1-db compression point p1db 38 dbm small signal gain g 14 db input vswr vswr 1.7:1 gate c urrent i gg 3.5 ma drain current i dd 3.5 a output vswr vswr 2.2:1 2 nd harmonic, 2-4 ghz 2f 16.5 dbc 2 nd harmonic, 6-8 ghz 2f 72 dbc features ? 8 watt saturated output power level ? eutectically mounted to heat spreader ? next level integration is a silver epoxy-based process ? variable drain voltage (6-10v) operation ? msag? process description the MAAP-000074-PED000 is a 2-stage 8w power amplifier with on-chip bias net- works, eutettically mounted on a 10-mil thick copper molybdenum (cumo) pedes- tal. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. fabricated using m/a-com?s repeatable, high performance and highly reliable gaas multifunction self-aligned gate (msag?)process, each device is 100% rf tested at the die-on-pedestal assembly level to ensure performance compliance. m/a-com?s msag? process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. the use of refractory metals and the absence of platinum in the gate metal formulation pre- vents hydrogen poisoning when employed in hermetic packaging. electrical characteristics: t b = 30c 1 , z 0 = 50 , v dd = 10v, i dq = 2.1a 2 , p in = 28 dbm, r g =40 primary applications ? satcom ? radio communications ? radar ? electronic warfare also available in: description ceramic package sample board (die) sample board (pkg) mechanical sample (die) part number maap- 000074-pkg001 m aap- 000074-smb004 m aap- 000074-smb001 m aap- 000074-mch000 die maapgm 0074-die
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 2 MAAP-000074-PED000 rev ? preliminary datasheet maximum ratings 3 operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -2.7 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 10.0 v. 3. adjust v gg to set i dq , (approximately @ ?2.2 v). 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain voltage v dd 4.0 10 10 v gate voltage v gg -2.6 -2.2 -1.5 v input power p in 28 30 dbm thermal resistance jc 4.3 c/w mmic base temperature t b note 5 c recommended operating conditions 4 parameter symbol absolute maximum units input power p in 33 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf) i dq 3.0 a junction temperature t j 170 c storage temperature t stg -55 to +150 c quiescent dc power dissipated (no rf) p diss 33 w 3. operation beyond these limits may result in permanent damage to the part. 4. operation outside of these ranges may reduce product reliability. 5. mmic base temperature = 170c ? jc * v dd * i dq power derating curve, quiescent (no rf) 0 5 10 15 20 25 30 35 40 -40 -20 0 20 40 60 80 100 120 140 160 180 maximum allowable base temperature [c] peak power dissipation [watts]
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 3 MAAP-000074-PED000 rev ? preliminary datasheet figure 1. output power and power added efficiency vs. frequency at v d =10 v, p in =28dbm, and 25% idss 25 27 29 31 33 35 37 39 41 43 45 2.02.53.03.54.04.55.05.56.06.57.07.58.08.59.0 frequency (ghz) p ou t (dbm) 0 5 10 15 20 25 30 35 40 45 50 pae (%) pout pae figure 2. 1db compression point vs. frequency by drain voltage at 25% idss 25 27 29 31 33 35 37 39 41 43 45 2.02.53.03.54.04.55.05.56.06.57.07.58.08.59.0 frequency (ghz) p 1db (dbm) 6v 8v 10v figure 3. saturated output power vs. frequency by drain voltage at 25% idss 25 27 29 31 33 35 37 39 41 43 45 2.02.53.03.54.04.55.05.5 6.06.57.07.58.08.59.0 frequency (ghz) psat (db m) 6v 8v 10v all data is at 30oc mmic base temperature, cw stimulus, unless otherwise noted. figure 4. saturated output power vs. frequency by temperature at 10v and 25% idss 25 27 29 31 33 35 37 39 41 43 45 2.0 2 .5 3.0 3 .5 4.0 4.5 5.0 5.5 6 .0 6.5 7 .0 7.5 8.0 8 .5 9.0 frequency (ghz) psat (dbm) - 20oc 33oc 93oc figure 5. small signal gain and input and output vswr vs. frequency by drain voltage at 25% idss 0 2 4 6 8 10 12 14 16 18 20 2.0 2.5 3 .0 3.5 4.0 4 .5 5.0 5.5 6 .0 6.5 7.0 7 .5 8.0 8.5 9 .0 frequency (ghz) gain (db) 1 2 3 4 5 6 vswr 10v input vswr outputvswr figure 6. output power, small signal gain, power added efficiency, and drain current vs. junction temperature at 10 v, 5.5 ghz, and 25% idss 22 .0 0 24 .0 0 26 .0 0 28 .0 0 30 .0 0 32 .0 0 34 .0 0 36 .0 0 38 .0 0 40 .0 0 42 .0 0 3 0 40 50 60 7 0 80 90 1 00 110 12 0 1 30 140 15 0 junction temperature (oc) output power (dbm), pae (%) 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 22.00 ssg (db), drain current (a) pout pae ssg ids
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 4 MAAP-000074-PED000 rev ? preliminary datasheet figure 7. output power vs. input power by frequency at 10v and 25% idss 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 6 8 10 12 1 4 16 1 8 20 22 2 4 26 28 30 input power (dbm) output power (dbm) 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz 7 ghz 8 ghz figure 9. power added efficiency vs. input power by frequency at 10v and 25% idss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 6 8 1 0 12 1 4 16 18 20 22 2 4 26 2 8 30 input power (dbm) pae (%) 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz 7 ghz 8 ghz figure 10. drain current vs. input power by frequency at 10v and 25% idss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 8 1 0 1 2 14 16 1 8 20 22 2 4 26 28 3 0 input power (dbm) drain current (a) 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz 7 ghz 8 ghz figure 8. gain vs. output power by frequency at 10v and 25% idss 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 1 5 1 7 19 21 23 25 27 2 9 3 1 3 3 3 5 37 39 41 43 output power (dbm) gain (db) 3 ghz 5.5 ghz 8 ghz figure 12. gain vs. output power by frequency at 8v and 25% idss 0.0 2.0 4.0 6.0 8.0 10 .0 12 .0 14 .0 16 .0 18 .0 20 .0 15 17 19 2 1 2 3 2 5 27 29 31 33 35 37 3 9 4 1 4 3 output power (dbm) gain (db) 3 ghz 5.5 ghz 8 ghz figure 11. output power vs. input power by frequency at 8v and 25% idss 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 6 8 10 1 2 14 1 6 18 20 22 24 2 6 28 3 0 input power (dbm) output power (dbm) 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz 7 ghz 8 ghz all data is at 30oc mmic base temperature, cw stimulus, unless otherwise noted.
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 5 MAAP-000074-PED000 rev ? preliminary datasheet figure 15. second harmonic vs. frequency by input power at 10v and 25% idss 0 10 20 30 40 50 60 70 80 90 10 0 2.02.5 3.03.54.0 4.55.05.5 6.06.57.07.58.08.59.0 fr eque nc y (g hz ) 2 nd harmonic (dbc) 6 dbm 10 dbm 14 dbm 18 dbm 22 dbm 26 dbm 30 dbm figure 16. fixture used to characterize maapgm0074-die under cw stimulus. figure 13. power added efficiency vs. input power by frequency at 8v and 25% idss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 6 8 1 0 12 1 4 16 18 20 22 2 4 26 2 8 30 input power (dbm) pae (%) 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz 7 ghz 8 ghz figure 14. drain current vs. input power by frequency at 8v and 25% idss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 8 1 0 1 2 14 16 1 8 20 22 2 4 26 28 3 0 input power (dbm) drain current (a) 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz 7 ghz 8 ghz all data is at 30oc mmic base temperature, cw stimulus, unless otherwise noted.
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 6 MAAP-000074-PED000 rev ? preliminary datasheet pad size ( m) rf in and out 100 x 200 dc drain supply voltage vd1 200 x 150 dc gate supply voltage vg1 150 x 150 size (mils) 4 x 8 8 x 6 6 x 6 dc drain supply voltage vd2 500 x 200 20 x 8 dc gate supply voltage vg2 150 x 125 6 x 5 pad no. 1 2 3 4 5 bond pad dimensions chip edge to bond pad dimensions are shown to the center of the bond pad. mechanical information chip size: 5.204 x 6.550 x 0.356 mm ( 204 x 258 x 14 mils) figure 17. die layout
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 7 MAAP-000074-PED000 rev ? preliminary datasheet gnd in implementing the dc/ rf crossover shown, the following rules must applied. 1. the dc crossovers should approach and cross the rf trace at a 90 degree angle; 2. the printed dc traces that approach the rf line should be stopped 2 substrate heights from the rf line edge; 3. the rated current capability of the dc crossovers should be greater than the maximum current of the device; and 4. the wires or ribbons used to make the dc crossovers should clear the rf trace by ~ 1 substrate height. die handling: refer to application note an3016. all application notes may be accessed by going to http://www.macom.com/ application%20notes/index.htm. power supply sequencing: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. in implementing the dc/ rf crossover shown, the following rules must applied. 1. the dc crossovers should approach and cross the rf trace at a 90 degree angle; 2. the printed dc traces that approach the rf line should be stopped 2 substrate heights from the rf line edge; 3. the rated current capability of the dc crossovers should be greater than the maximum current of the device; and 4. the wires or ribbons used to make the dc crossovers should clear the rf trace by ~ 1 substrate height. die handling: refer to application note an3016. all application notes may be accessed by going to http://www.macom.com/ application%20notes/index.htm. power supply sequencing: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. recommended layout and wire bonding configuration
amplifier, power, 8w 2.0-8.0 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. 8 MAAP-000074-PED000 rev ? preliminary datasheet next level assembly instructions: pedestal die attach: the following paragraphs detail recommendations and instructions for the integration of the die on pedestal (ic assembly) and mating substrates to the next level assembly. these recommendations are summa- rized pictorially in figure 18. to attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy. two epoxies are recommended for this purpose, diemat (www.diemat.com) pns dm6030hk and dm4030ld with bulk thermal conductivities of 60 and 15 w/m-oc, respectively. silver-filled epoxies with conductivities < 10 w/m-oc are not recommended for use in attaching these ic assemblies. dm6030hk is recommended for use when the coefficient of thermal expansion (cte) of the material to which the ic assembly is to be attached is similar to that of cumo (cte ~ 7ppm). a next level assembly attach material with a cte range of 4-10ppm would be acceptable. dm4030ld is recommended when the cte of the next level assembly mate- rial is significantly greater than cumo, e.g, copper and aluminum with ctes of 14 and 23 ppm, respectively. bondline thickness, the as-cured thickness of the silver epoxy layer between the ic assembly and next level assembly attach surface, is a critical parameter in terms of device performance and reliability. bondline thickness should be maintained between 1 and 1.5 mils. a bondline thickness of < 1 mil reduces the sheer strength of the mechanical at- tach. bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the ic and thereby the mttf. the pedestal thickness used in the ic assembly is set at 10 mils such that the final ic assembly thickness is ~ 14 mils making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through x-band. this surface planarity was an objective because it results in shorter rf bond wire lengths between the ic assembly rf i/o and the mating substrate transmission line. long bond wires can shift the load impedance required for ideal power transfer. shorter rf bond wires result in improved rf performance. in any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and ic assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or ic as- sembly peripheries. this variability, if not compensated for in the design of the overall assembly, can result in a high number of assembly failures due to epoxy wicking. this wicking process can occur when a mating substrate and ic assembly are placed too close to each other. to avoid this occurrence, a designed-in 5-10 mil spacing between the ic assembly and mating substrates is recommended. wirebonding: bond @ 160c using standard ball or thermal compression wedge bond techniques. for dc pad con- nections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shortest length, although ball bonds are also acceptable.
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